Layer 1
An optically transparent interface layer designed to modify band bending and increase useful built-in potential.
The technology
A better contact. An existing platform.
We are developing a dual-layer p-type contact for n-type TOPCon cells. Our objective is to recover voltage at the front interface while retaining the manufacturing architecture.
The interface opportunity
Engineering where
the losses occur.
The contact between metal and p-type silicon can create an electronic barrier. Our contact architecture is intended to improve band bending, reduce losses and support charge collection.
Conventional TOPCon
Incident light / photons hν
Conventional AlOₓ / SiN front layers
p-type silicon
n-type silicon substrate
Rear contact architecture
The front contact can contribute to barriers, recombination and resistive losses.
SiVolt contact concept
Incident light / photons hν
Layer 2 · lateral conductivity
Layer 1 · interface engineering
p-type silicon
n-type silicon substrate
Rear contact architecture
Designed to improve the front electrical interface while preserving the core cell architecture.
Conceptual architecture; layers are not to scale. Detailed materials and process parameters are available through confidential technical diligence.
Layer 2
An optically transparent, conductive layer intended to support the interface and provide lateral charge transport.
Factory continuity
Our proposed retrofit directly substitutes conventional AlOₓ/SiN front layers, preserving the dominant steps of the underlying TOPCon manufacturing sequence.
Reported evidence
A +90 mV
laboratory signal.
Laboratory testing on a 20-cell sample reports improvements in voltage, current and fill factor.
Reported laboratory resultThe next test is industrial.
Our approximately 27% cell-efficiency endpoint is a development target. Performance must be independently replicated on industrial-format wafers, at commercial throughput and acceptable yield.
Development targetExplore the validation milestonesEquipment integration
Designed around
industrial deposition.
Our intended process uses two deposition steps. Existing tool reuse and process integration remain subject to technical confirmation.
VON ARDENNE has been identified as the primary equipment integration candidate in our engineering evaluations. Its TOPCon coating equipment provides relevant industrial context.
Candidate European equipment ecosystem
| Equipment supplier | Country |
|---|---|
| VON ARDENNE | Germany |
| SPTS / KLA | United Kingdom |
| Evatec | Switzerland |
| Singulus | Germany |
| IHI / Hauzer | Netherlands |
Equipment compatibility and commercial agreements remain subject to validation and confirmation.
The next conversation